Showing results: 166 - 180 of 200 items found.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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HMC7885 -
Analog Devices Inc.
The HMC7885 is a 32 W gallium nitride (GaN), monolithic microwave integrated circuit (MMIC) power amplifier (PA) module that operates between 2 GHz and 6 GHz, and is provided in an 18-lead hermetically sealed module. The amplifier typically provides 21 dB of small signal gain and 45 dBm of saturated radio frequency (RF) output power. The amplifier draws 2200 mA of quiescent current (IDD) from a 28 V dc supply. The RF input and output are dc blocked and matched to 50 Ω for ease of use.
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Thermo Fisher Scientific Inc.
Identify and help correct ESD and latch-up susceptibility issues on sensitive integrated circuit components prior to full-scale production with the Thermo Scientific™ MK.2-SE ESD and Latch-Up Test System. The MK.2-SE test system provides advanced capabilities to test high pin count IC devices to Human Body Model (HBM) and Machine Model (MM) ESD standards. The system’s pulse delivery design addresses wave form hazards such as trailing pulse and pre-discharge voltage rise, and performs Latch-Up testing per the JEDEC EIA/JESD 78 Method.
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DRK8011 -
Shandong Drick Instruments Co., Ltd.
DRK8011 Digital melting point apparatus is fully in line with ‘humanize’ of the design concept, using photoelectric automatic detection, dot matrix image LCD technology, digital keyboard input, each measuring one sample, measure three times the average of the melting point of the automatic strike, and has a melting, melting end automatically, melting curve automatic recording function. Temperature system uses high inearity make platinum resistance sensing element, the use of PID regulationtechnology to improve theaccuracy and reliability of the melting point, and with integrated electronic circuits to achieve rapid "starting temperature" setting and eight stalls to choose from linear "heating rate" Automatic Control. Instrument to establish communication with the PC via USB, save or print the graph, the instrument can be directly connected with the RS232 mini-printers, print graphs. The instrument uses Pharmacopoeia as a sample capillary tube.
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Corelis, Inc.
The benefits of boundary-scan are noticed in all phases of a product life cycle. By coupling the power of Corelis boundary-scan tools with an In-Circuit Tester (ICT), a complete, integrated solution is available that offers the best advantages of both technologies.Boundary-scan operates as the perfect companion to ICT. Boundary-scan is capable of testing areas of printed circuit board assemblies that are difficult to access due to physical space constraints and loss of physical access, which is often due to fine pitch components such as Ball Grid Array (BGA) devices. Conversely, the ICT is able to check the non-boundary-scan compatible portion of the unit under test (UUT) such as analog.
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Freese Enterprises Inc.
Freese Enterprises (FEI) has vast experience, in many industries, in the custom design and construction of physical test fixtures to consistently test a feature or operation of a device or piece of software. FEI can develop test solutions for modules or fully assembled products such as key fobs, RF filters, and cell phones - from complex integrated circuits and custom electronics to automotive components and RF communication devices. In general, the advantages of FEI test fixtures include the separation of the test initialization and destruction from the testing, reusing a known state for more than one test, and assumption by the testing framework that the fixture set-up works.
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783124-02 -
NI
Up to 26.5 GHz PXI Vector Signal Analyzer - The PXIe‑5668 offers wide bandwidth with high-performance measurement performance and speed. It meets the challenging requirements of applications such as wireless communications, radio frequency integrated circuit characterization, RADAR … test, and spectrum monitoring and signal intelligence. With its implementation as a PXI instrument, the PXIe‑5668 also features the fast measurement speed required for high-volume manufacturing test, and multi-instrument synchronization capabilities for phase-coherent MIMO test. You can use the optionally included PXIe-5698 preamplifier to improve dynamic range and sensitivity near the instrument noise floor.
